BSO211PNTMA1 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

BSO211PNTMA1

Description:

MOSFET 2P-CH 20V 4.7A 8PDSO

Stock:

14704

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.16

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Parameters

Current at 25 ° C - continuous drain (Id)

4.7A

Drain source voltage (Vdss)

20V

FET Type

2 P Channel(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

23.9nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

920pF @ 15V

On resistance (maximum) for different Ids and Vgs

67 mΩ @ 4.7A,4.5V

Power - maximum

Vgs (th) (maximum) for different Ids

1.2V @ 25µA

packing

TR,CT

series

OptiMOS™

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

BSO211PNTMA1（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14704,Price reference "real-time change" China/Hongkong。 BSO211PNTMA1 package/specs, Download BSO211PNTMA1、Datasheet。